AM28F512-150JC
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144,80 TL
IC FLASH 512KBIT 150NS 32PLCC
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512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS ■ High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption ■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP ■ 10,000 write/erase cycles minimum ■ Write and erase voltage 12.0 V ±5% ■ Latch-up protected to 100 mA from -1 V to VCC +1 V ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase ■ Flashrite Programming — 10 µs typical byte-program — One second typical chip program ■ Command register architecture for microprocessor/microcontroller compatible write interface ■ On-chip address and data latches ■ Advanced CMOS flash memory technology — Low cost single transistor memory cell ■ Automatic write/erase pulse stop timer
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512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS ■ High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption ■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP ■ 10,000 write/erase cycles minimum ■ Write and erase voltage 12.0 V ±5% ■ Latch-up protected to 100 mA from -1 V to VCC +1 V ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase ■ Flashrite Programming — 10 µs typical byte-program — One second typical chip program ■ Command register architecture for microprocessor/microcontroller compatible write interface ■ On-chip address and data latches ■ Advanced CMOS flash memory technology — Low cost single transistor memory cell ■ Automatic write/erase pulse stop timer
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