TEFT4300 RoHS
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23,22 TL
Silicon NPN Phototransistor
| Technical Specifications |
| Part Nr. |
WLS |
AHS |
UCEO |
ICEO |
IC(on) |
| [nm] |
[°] |
[V] |
[nA] |
[mA] |
|
| BPW77NB | 850 |
20 |
70 |
100 |
10 |
| TEFT4300 | 925 |
60 |
70 |
200 |
0,8 |
| TEMT3700F | 940 |
120 |
70 |
200 |
0,25 |
| WLS = Wavelength Of Peak Sensitivity, AHS= Angle Of Hall Sensitivity, UCEO = Collector Emitter Voltage At Open Base, ICEO = Max Collector Dark Current, IC(on) = Min. On State Collector Current |
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