IRFD120 RoHS
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30,19 TL
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: HVMDIP-4
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 1.3 A
Rds On - Drain-Source Resistance: 270 mOhms
Vgs th - Gate-Source Threshold Voltage: 2 V
Vgs - Gate-Source Voltage: 10 V
Qg - Gate Charge: 16 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd - Power Dissipation: 1.3 W
Channel Mode: Enhancement
Packaging: Tube
Height: 3.37 mm
Length: 6.29 mm
Transistor Type: 1 N-Channel
Width: 5 mm
Brand: Vishay / Siliconix
Forward Transconductance - Min: 0.8 S
Fall Time: 17 ns
Product Type: MOSFET
Rise Time: 27 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 6.8 ns
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